unisonic technologies co., ltd 12p10 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2014 unisonic technologies co., ltd qw-r502-262.g 9.4a, 100v p-channel power mosfet ? description the 12p10 uses advanced proprietary, planar stripe, dmos technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching dc/dc converters, and dc motor control. ? features * r ds(on) < 0.29 ? @v gs = -10v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4 5 6 7 8 12p10l-aa3-r 12P10G-AA3-R sot-223 g d s - - - - - tape reel 12p10l-tm3-t 12p10g-tm3-t to-251 g d s - - - - - tube 12p10l-tms-t 12p10g-tms-t to-251s g d s - - - - - tube 12p10l-tn3-r 12p10g-tn3-r to-252 g d s - - - - - tape reel 12p10l-tnd-r 12p10g-tnd-r to-252d g d s - - - - - tape reel 12p10l-tq2-r 12p10g-tq2-r to-263 g d s - - - - - tape reel 12p10l-tq2-t 12p10g-tq2-t to-263 g d s - - - - - tube 12p10l-s08-r 12p10g-s08-r sop-8 s s s g d d d d tape reel note: pin assignment: g: gate d: drain s: source
12p10 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-262.g ? marking information package marking sot-223 to-251 to-251s to-252 to-252d to-263 sop-8
12p10 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-262.g ? absolute maximum ratings (t c =25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -100 v gate-source voltage v gss 30 v continuous drain current i d -9.4 a pulsed drain current (note 2) i dm -37.6 a avalanche current (note 2) i ar -9.4 a single pulsed avalanche energy (note 3) e as 280 mj repetitive avalanche energy (note 2) e ar 5.0 mj power dissipation to-251/to-251s to-252/to-252d p d 50 w to-263 65 w sot-223 8 w sop-8 5 w junction temperature t j +150 storage temperature t stg -55 ~ +150 note: 1. 2. 3. 4. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) l=6.3mh, i as =-9.4a, v dd =-25v, r g =25 ? , starting t j =25c i sd -11.5a, di/dt 300 a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit junction to ambient to-251/to-251s to-252/to-252d ja 110 /w to-263 62.5 /w sot-223 125 /w sop-8 150 /w junction to case to-251/to-251s to-252/to-252d jc 2.5 /w to-263 1.9 /w sot-223 14 /w sop-8 25 /w
12p10 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-262.g ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =-250a -100 v drain-source leakage current i dss v ds =-100v, v gs =0v -1 a v ds =-100v, t c =125c -10 a gate-source leakage current i gss v ds =0v, v gs =30v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250a -2.0 -4.0 v static drain-source on-resistance r ds ( on ) v gs =-10v, i d =-4.7a 0.24 0.29 ? forward transconductance g fs v ds =-40v, i d =-4.7a (note 1) 6.3 s dynamic parameters input capacitance c iss v ds =-25v, v gs =0v, f=1.0mhz 570 800 pf output capacitance c oss 115 290 pf reverse transfer capacitance c rss 30 85 pf switching parameters total gate charge q g v ds =-50v, i d =-1.3a, v gs =-10v(note 1, 2) 21 27 nc gate source charge q gs 4.6 nc gate drain charge q gd 4 nc turn-on delay time t d ( on ) v dd =-30v, i d =-0.5a, r g =25 ? (note 1, 2) 30 40 ns turn-on rise time t r 64 100 ns turn-off delay time t d ( off ) 155 175 ns turn-off fall-time t f 70 90 ns source- drain diode ratings and characteristics diode forward voltage v sd v gs =0v, i s =-9.4a -4.0 v maximum body-diode continuous current i s -9.4 a maximum pulsed drain-source diode forward current i sm -37.6 a note: 1. pulse test : pulse width 300 s, duty cycle 2% note: 2. essentially independent of operating temperature
12p10 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-262.g ? test circuits and waveforms l v dd v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period - + compliment of d.u.t. (n-channel) peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
12p10 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-262.g ? test circuits and waveforms (cont.) switching test circuit switching waveforms gate charge test circui t gate charge waveform d.u.t. r g -10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
12p10 power mosfet unisonic technologies co., ltd 7 of 6 www.unisonic.com.tw qw-r502-262.g ? typical characteristics utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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